Penn State gains $3m DARPA grant for GaN-on-silicon project with Northrop Grumman

Penn State is to receive $3m from the US Defense Advanced Research Projects Agency (DARPA) as part of a larger grant awarded to defense, aerospace and technology company Northrop Grumman. The joint project aims to develop a novel method for integrating gallium nitride (GaN) with silicon substrates, since GaN provides superior performance and faster switching speeds for power-intensive applications while silicon offers scalability and affordability. This hybrid approach can lead to more efficient power electronics with lower production costs, suiting high-demand applications like electric vehicles, power electronics and data centers, where efficiency and durability are critical...Weiter zum vollständigen Artikel bei Semiconductor Today Weiter zum vollständigen Artikel bei Semiconductor Today