OptiMOS™ Linear FET 2 MOSFET enables optimal hot-swap and battery protection

Munich, Germany – 13 November 2024 – The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low RDS(on). Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) addresses this challenge with the new OptiMOS™ 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the RDS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses during operation due to its low RDS(on). Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio.Weiter zum vollständigen Artikel bei Infineon Technologies AG Weiter zum vollständigen Artikel bei Infineon Technologies AG